Abstract
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin-diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room-temperature amplification of the magnetoresistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.
- Received 29 March 2006
DOI:https://doi.org/10.1103/PhysRevB.73.161307
©2006 American Physical Society