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Spin transference and magnetoresistance amplification in a transistor

H. Dery, Ł. Cywiński, and L. J. Sham
Phys. Rev. B 73, 161307(R) – Published 25 April 2006

Abstract

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin-diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room-temperature amplification of the magnetoresistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

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  • Received 29 March 2006

DOI:https://doi.org/10.1103/PhysRevB.73.161307

©2006 American Physical Society

Authors & Affiliations

H. Dery*, Ł. Cywiński, and L. J. Sham

  • Department of Physics, University of California San Diego, La Jolla, California 92093-0319, USA

  • *Electronic address: hdery@ucsd.edu

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Issue

Vol. 73, Iss. 16 — 15 April 2006

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