Voltage switching and domain relocation in semiconductor superlattices

L. L. Bonilla, R. Escobedo, and G. Dell’Acqua
Phys. Rev. B 73, 115341 – Published 31 March 2006

Abstract

A numerical study of domain wall relocation during voltage switching with different ramping times is presented for weakly coupled, doped semiconductor superlattices exhibiting multistable domain formation in the first plateau of their current-voltage characteristics. Stable self-oscillations of the current at the end of stable stationary branches of the current-voltage characteristics have been found. These oscillations are due to periodic motion of charge dipoles near the cathode that disappear inside the SL, before they can reach the receiving contact. Depending on the dc voltage step, the type of multistability between static branches and the duration of voltage switching, unusual relocation scenarios are found including changes of the current that follow adiabatically the stable IV branches, different faster episodes involving charge tripoles and dipoles, and even small amplitude oscillations of the current near the end of static IV branches followed by dipole-tripole scenarios.

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  • Received 20 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.115341

©2006 American Physical Society

Authors & Affiliations

L. L. Bonilla*, R. Escobedo, and G. Dell’Acqua

  • Grupo de Modelización y Simulación Numérica, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Leganés, Spain

  • *Electronic address: bonilla@ing.uc3m.es

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Vol. 73, Iss. 11 — 15 March 2006

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