Critical temperatures of the two-band model for diluted magnetic semiconductors

F. Popescu, Y. Yildirim, G. Alvarez, A. Moreo, and E. Dagotto
Phys. Rev. B 73, 075206 – Published 15 February 2006

Abstract

Using dynamical mean field theory and Monte Carlo simulations, we study the ferromagnetic transition temperature (Tc) of a two-band model for diluted magnetic semiconductors (DMS), varying coupling constants, hopping parameters, and carrier densities. We found that Tc is optimized at all fillings p when both impurity bands fully overlap in the same energy range, namely when the exchange couplings J and bandwidths are identical. The optimal Tc is found to be about twice larger than the maximum value obtained in the one-band model, showing the importance of multiband descriptions of DMS at intermediate J’s.

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  • Received 11 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.075206

©2006 American Physical Society

Authors & Affiliations

F. Popescu1, Y. Yildirim1, G. Alvarez2, A. Moreo3,4, and E. Dagotto3,4

  • 1Physics Department, Florida State University, Tallahassee, Florida 32306, USA
  • 2Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032, USA
  • 3Department of Physics, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 4Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032, USA

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Vol. 73, Iss. 7 — 15 February 2006

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