Growth instability in Cu multilayer films due to fast edge/corner diffusion

Yunsic Shim and Jacques G. Amar
Phys. Rev. B 73, 035423 – Published 20 January 2006

Abstract

The instability observed in CuCu(100) epitaxial growth by Ernst et al. [Phys. Rev. Lett. 72, 112 (1994)] is studied using serial kinetic Monte Carlo (KMC) simulations as well as a recently proposed algorithm for parallel KMC. Our parallel algorithm allows us to simulate longer time scales which are not easily accessible by a serial Monte Carlo simulation. Two different sets of activation barriers were used—one based on effective medium theory and the other based on the embedded-atom method. In both cases, we find that the existence of very fast edge diffusion along close-packed step edges along with a slight enhancement of the rate of corner diffusion is crucial to explaining the experimental results. Some possible mechanisms for this enhancement are discussed.

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  • Received 11 July 2005

DOI:https://doi.org/10.1103/PhysRevB.73.035423

©2006 American Physical Society

Authors & Affiliations

Yunsic Shim* and Jacques G. Amar

  • Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606, USA

  • *Electronic address: yshim@physics.utoledo.edu
  • Electronic address: jamar@physics.utoledo.edu

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Issue

Vol. 73, Iss. 3 — 15 January 2006

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