Unconventional Hall effect in oriented Ca3Co4O9 thin films

H. W. Eng, P. Limelette, W. Prellier, Ch. Simon, and R. Frésard
Phys. Rev. B 73, 033403 – Published 11 January 2006

Abstract

Transport properties of the good thermoelectric misfit oxide Ca3Co4O9 are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on c-cut sapphire substrates using the pulsed laser deposition technique. Interpretation of the in-plane transport experiments relates the substrate-induced strain in the resulting film to single crystals under very high pressure (5.5GPa) consistent with a key role of strong electronic correlation. They are confirmed by the measured high temperature maxima in both resistivity and Hall resistance. While holelike charge carriers are inferred from the Hall effect measurements over the whole investigated temperature range, the Hall resistance reveals a nonmonotonic behavior at low temperatures that could be interpreted with an anomalous contribution. The resulting unconventional temperature dependence of the Hall resistance seems thus to combine high temperature strongly correlated features above 340K and an anomalous Hall effect at low temperature, below 100K.

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  • Received 14 April 2005

DOI:https://doi.org/10.1103/PhysRevB.73.033403

©2006 American Physical Society

Authors & Affiliations

H. W. Eng1, P. Limelette2,*, W. Prellier1,†, Ch. Simon1, and R. Frésard1

  • 1Laboratoire CRISMAT, UMR 6508 CNRS, ENSICAEN, 6, Boulevard du Maréchal Juin, 14050 CAEN Cedex, France
  • 2Groupe Matière Condensée et Matériaux, UMR CNRS 6626, Université de Rennes I, 35042 Rennes, France

  • *Present address: Laboratoire LEMA, UMR 6517 CNRS-CEA, Université Rabelais, UFR Sciences, Parc de Grandmont, 37200 Tours, France.
  • Electronic address: prellier@ensicaen.fr

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Issue

Vol. 73, Iss. 3 — 15 January 2006

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