Band diagrams of Si and Ge quantum wells via the 30-band kp method

Soline Richard, Frédéric Aniel, and Guy Fishman
Phys. Rev. B 72, 245316 – Published 12 December 2005

Abstract

We report on a method to calculate the band diagram of quantum wells using a 30-band kp Hamiltonian. The subbands are calculated over the entire Brillouin zone. Such an approach is useful not only for a valence band description but also for a conduction band description when the energy minimum is not located at the center of the Brillouin zone as is the case for Si, SiGe, and Ge. The method also provides information about confinement in L or X valleys for III-V heterostructures. Such a formalism is useful for both optical calculation and for transport modeling. As an illustration, the scattering rates for holes confined in a quantum well are calculated. The accurate density of states provided by the 30-band kp method gives access to very different scattering rates as compared with those obtained following an effective mass approach.

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  • Received 26 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.245316

©2005 American Physical Society

Authors & Affiliations

Soline Richard, Frédéric Aniel, and Guy Fishman

  • Institut d’Électronique Fondamentale, UMR 8622 CNRS, Bâtiment 220, Université Paris Sud, 91405 Orsay Cedex, France

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Issue

Vol. 72, Iss. 24 — 15 December 2005

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