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Local transport in a disorder-stabilized correlated insulating phase

M. Baenninger, A. Ghosh, M. Pepper, H. E. Beere, I. Farrer, P. Atkinson, and D. A. Ritchie
Phys. Rev. B 72, 241311(R) – Published 22 December 2005

Abstract

We report the experimental realization of a correlated insulating phase in two-dimensional (2D) GaAsAlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hopping transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by the mutual interplay of disorder and Coulomb interaction.

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  • Received 13 October 2005

DOI:https://doi.org/10.1103/PhysRevB.72.241311

©2005 American Physical Society

Authors & Affiliations

M. Baenninger, A. Ghosh, M. Pepper, H. E. Beere, I. Farrer, P. Atkinson, and D. A. Ritchie

  • Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom

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Issue

Vol. 72, Iss. 24 — 15 December 2005

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