Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach

J. Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, E. Johannessen, and P. Harrison
Phys. Rev. B 72, 235322 – Published 19 December 2005

Abstract

We have investigated the optical transitions in Be δ-doped GaAsAlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron–acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated.

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  • Received 17 August 2005

DOI:https://doi.org/10.1103/PhysRevB.72.235322

©2005 American Physical Society

Authors & Affiliations

J. Kundrotas, A. Čerškus, S. Ašmontas, and G. Valušis*

  • Semiconductor Physics Institute, A. Goštauto Street 11, LT-01108 Vilnius, Lithuania

B. Sherliker and M. P. Halsall

  • School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD, United Kingdom

M. J. Steer

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JJD, United Kingdom

E. Johannessen

  • Microtech Innovation, Ynglingeveien 42, 3184 Borre, Norway

P. Harrison

  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

  • *Corresponding author. Electronic address: valusis@pfi.lt

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Vol. 72, Iss. 23 — 15 December 2005

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