Temperature-dependent optical properties of InAsGaAs quantum dots: Independent carrier versus exciton relaxation

P. Dawson, O. Rubel, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel
Phys. Rev. B 72, 235301 – Published 2 December 2005

Abstract

We have performed temperature-dependent studies of the photoluminescence properties of a range of InAsGaAs quantum dot structures. Changes in the temperature dependence of the peak energy and spectral width are governed by thermally stimulated transfer processes and hence depend on the depth of the confining potentials. We have compared our experimental results with detailed calculations based upon correlated electron-hole (exciton) or independent electron-hole relaxation. We conclude that at elevated temperatures the carrier dynamics are governed by independent carrier relaxation.

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  • Received 1 July 2005

DOI:https://doi.org/10.1103/PhysRevB.72.235301

©2005 American Physical Society

Authors & Affiliations

P. Dawson1,*, O. Rubel2, S. D. Baranovskii2, K. Pierz3, P. Thomas2, and E. O. Göbel3

  • 1School of Physics and Astronomy, University of Manchester, Sackville Building, Manchester, England
  • 2Department of Physics and Material Sciences Center, Philipps-University Marburg, Renthof Str. 5, D-35032 Marburg, Germany
  • 3Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany

  • *Email address: philip.dawson@manchester.ac.uk

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Issue

Vol. 72, Iss. 23 — 15 December 2005

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