Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers

H. H. Nilsson, J.-Z. Zhang, and I. Galbraith
Phys. Rev. B 72, 205331 – Published 21 November 2005

Abstract

The homogeneous broadening in semiconductor quantum dot (QD) lasers and optical amplifiers is studied theoretically. Based on a model for the electronic states of the coupled QD–wetting layer (WL) system, Coulomb interaction matrix elements are calculated, including both screening and exchange interaction. The homogeneous broadening due to various Auger processes, involving scattering of carriers between WL states and confined QD states, is calculated. The effects of the orthogonalization of WL states, QD confinement, QD density, and carrier density on the homogeneous broadening are studied systematically. We found that such WL-assisted Auger scattering is very efficient with subpicosecond dephasing times, and it is the dominant channel for the homogeneous broadening at high carrier density. Good agreement is achieved when comparing our theoretical results and recent experimental data.

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  • Received 18 December 2004

DOI:https://doi.org/10.1103/PhysRevB.72.205331

©2005 American Physical Society

Authors & Affiliations

H. H. Nilsson*, J.-Z. Zhang, and I. Galbraith

  • Physics, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom

  • *Electronic address: phyhn@hw.ac.uk

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Issue

Vol. 72, Iss. 20 — 15 November 2005

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