Ground and excited state energy trend in InAsInGaAs quantum dots monitored by scanning photoluminescence spectroscopy

T. V. Torchynska, M. Dybiec, and S. Ostapenko
Phys. Rev. B 72, 195341 – Published 29 November 2005

Abstract

This paper presents a temperature-dependent scanning photoluminescence spectroscopic study of the ground and excited states on InAs quantum dots (QDs) inserted into In0.15Ga0.85AsGaAs quantum wells. It is shown that structures exhibit a long-range spatial variation of the QD electronic states across the wafer. The observed trend of the ground state energy is attributed to the QD size variation and applied to explore multiple excited state energy shift versus ground state energy. Experimental results are compared with the electronic energy level dependence versus QD size predicted theoretically earlier on the basis of the eight-band kp approximation.

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  • Received 11 June 2005

DOI:https://doi.org/10.1103/PhysRevB.72.195341

©2005 American Physical Society

Authors & Affiliations

T. V. Torchynska

  • SEPI–National Polytechnic Institute, Mexico D.F. 07738, Mexico

M. Dybiec and S. Ostapenko

  • Nanomaterials and Nanomanufacturing Research Center, University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA

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Issue

Vol. 72, Iss. 19 — 15 November 2005

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