Scaling flow diagram in the fractional quantum Hall regime of GaAsAlxGa1xAs heterostructures

S. S. Murzin, S. I. Dorozhkin, D. K. Maude, and A. G. M. Jansen
Phys. Rev. B 72, 195317 – Published 11 November 2005

Abstract

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σxy,σxx) are studied in the fractional quantum Hall regime for a two-dimensional (2D) electron system in GaAsAlxGa1xAs heterostructures. The flow lines are rather well-described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σxy,σxx) point determines a complete flow line.

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  • Received 7 September 2005

DOI:https://doi.org/10.1103/PhysRevB.72.195317

©2005 American Physical Society

Authors & Affiliations

S. S. Murzin1, S. I. Dorozhkin1, D. K. Maude2, and A. G. M. Jansen3

  • 1Institute of Solid State Physics RAS, 142432, Chernogolovka, Moscow District, Russia
  • 2Grenoble High Magnetic Field Laboratory, Max-Planck-Institut für Festkörperforschung and Centre National de la Recherche Scientifique, Boîte Postale 166, F-38042, Grenoble Cedex 9, France
  • 3Service de Physique Statistique, Magnétisme, et Supraconductivité, Département de Recherche Fondamentale sur la Matière Condensée, CEA-Grenoble, 38054 Grenoble Cedex 9, France

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Issue

Vol. 72, Iss. 19 — 15 November 2005

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