Hole-hole interaction in a strained InxGa1xAs two-dimensional system

G. M. Minkov, A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, V. A. Larionova, and B. N. Zvonkov
Phys. Rev. B 72, 165325 – Published 19 October 2005

Abstract

The interaction correction to the conductivity of 2D hole gas in strained GaAsInxGa1xAsGaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation, and ballistic contribution should be taken into account for reliable determination of the Fermi-liquid constant F0σ. The proper consideration of these effects allows us to describe both the temperature and magnetic field dependences of the conductivity and to find the value of F0σ.

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  • Received 3 May 2005

DOI:https://doi.org/10.1103/PhysRevB.72.165325

©2005 American Physical Society

Authors & Affiliations

G. M. Minkov and A. A. Sherstobitov

  • Institute of Metal Physics RAS, 620219 Ekaterinburg, Russia

A. V. Germanenko, O. E. Rut, and V. A. Larionova

  • Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russia

B. N. Zvonkov

  • Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russia

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Issue

Vol. 72, Iss. 16 — 15 October 2005

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