Screening of point charges in Si quantum dots

A. Franceschetti and M. C. Troparevsky
Phys. Rev. B 72, 165311 – Published 7 October 2005

Abstract

The screening of a point charge in hydrogenated Si quantum dots ranging in diameter from 10Åto26Å has been studied using first-principles density-functional theory in the local density approximation. We find that the main contribution to the screening function originates from the electrostatic field set up by the polarization charges at the surface of the nanocrystals. We show that this contribution is well described by a classical electrostatics model of dielectric screening.

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  • Received 1 June 2005

DOI:https://doi.org/10.1103/PhysRevB.72.165311

©2005 American Physical Society

Authors & Affiliations

A. Franceschetti and M. C. Troparevsky

  • Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA*

  • *Present address: National Renewable Energy Laboratory, Golden, CO 80401.

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Vol. 72, Iss. 16 — 15 October 2005

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