Optical response in a quantum dot superlattice nanoring under a lateral electric field

T. Y. Zhang, W. Zhao, and J. C. Cao
Phys. Rev. B 72, 165310 – Published 6 October 2005

Abstract

The optical absorption of a GaAsAlGaAs quantum dot superlattice nanoring (QDSLNR) under a lateral dc electric field and with magnetic flux threading the ring is investigated. This structure and configuration provides a unique opportunity to study the optical response of a superlattice under an inhomogeneous electric field, which is not easily realized for general quantum well superlattices (QWSLs) but naturally realized for QDSLNRs under a homogeneous lateral electric field. It has been shown that a lateral dc electric field gives rise to a substantial change of the optical absorption spectra. Under a low field, the excitonic optical absorption is dominated by a 1s exciton. And with the electric field increasing, the optical absorption undergoes a transition from 1s excitonic absorption to 0 excitronic WSL absorption. (The number of 0, and 1 and +1 below are WSLs index.) The 1 and the +1 WSLs corresponding to the maximum effective field can also be identified. Due to the inhomogeneity of the electric field, the peaks of the 1 and the +1 WSLs are diminished and between them there exist rich and complicated structures. This is in contrast to the general QWSLs under a homogenous electric field. The complicated structures can be understood by considering the inhomogeneity of the electric field along the ring, which results in the nearest-neighbor transition, the next-nearest-neighbor transition, etc., have a different value repectively, at different sites along the ring. This may give rise to multiple WSLs. We have also shown that the line shape of the optical absorption is not sensitive to the threading magnetic flux. The threading magnetic flux only gives rise to a slight diamagnetic shift. Thus the enhancement of the sensitivity to the flux allowing for observation of the excitonic Aharanov-Bohm effect in the plain nanoring is not expected in QDSLNRs.

  • Figure
  • Figure
  • Figure
  • Received 17 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.165310

©2005 American Physical Society

Authors & Affiliations

T. Y. Zhang1,2, W. Zhao1, and J. C. Cao2

  • 1State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, 322 West Youyi Road, Xi’an, 710068, People’s Republic of China
  • 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, People’s Republic of China

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 72, Iss. 16 — 15 October 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×