Magnetic and electronic transport percolation in epitaxial Ge1xMnx films

N. Pinto, L. Morresi, M. Ficcadenti, R. Murri, F. D’Orazio, F. Lucari, L. Boarino, and G. Amato
Phys. Rev. B 72, 165203 – Published 12 October 2005

Abstract

Electronic transport and magnetic properties of Ge1xMnxGe(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulatorlike behavior in the whole temperature range and, below about 80K, two distinct activation energies are observed. At a higher temperature value, TR, resistivity experiences a sudden reduction. The Hall coefficient shows a strong contribution from the anomalous Hall effect and, at TR, a sign inversion, from positive to negative, is recorded. The magnetic properties, inferred from magneto-optical Kerr effect, evidence a progressive decrease of the ferromagnetic long range order as the temperature is raised, with a Curie temperature TC not far from TR. The transport and magnetic results are qualitatively consistent with a percolation mechanism due to bound magnetic polarons in a GeMn diluted magnetic semiconductor, with localized holes [A. Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].

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  • Received 5 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.165203

©2005 American Physical Society

Authors & Affiliations

N. Pinto1,*, L. Morresi1, M. Ficcadenti1, R. Murri1, F. D’Orazio2, F. Lucari2, L. Boarino3, and G. Amato3

  • 1INFM—Dipartimento di Fisica, Università di Camerino, Via Madonna delle Carceri, I-62032 Camerino, Italy
  • 2INFM—Dipartimento di Fisica, Università di L’Aquila, Via Vetoio-Coppito, I-67010 L’Aquila, Italy
  • 3IEN “G. Ferraris”, Via delle Cacce 91, I-10135 Torino, Italy

  • *Electronic address: nicola.pinto@unicam.it

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Issue

Vol. 72, Iss. 16 — 15 October 2005

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