Quasimetallic behavior of carrier-polarized C60 molecular layers: Experiment and theory

Z. H. Lu, C. C. Lo, C. J. Huang, Y. Y. Yuan, M. W. C. Dharma-wardana, and Marek Z. Zgierski
Phys. Rev. B 72, 155440 – Published 28 October 2005

Abstract

Although C60 is an insulator with a band gap Eg of 2.5eV, we show experimentally and theoretically that Eg is strongly affected by image forces and injected charges. In sharp contrast to the Coulomb blockade typical of quantum dots, Eg is reduced by Coulomb effects. The conductance of a micron-sized C60 film sandwiched between metal (Al, Ag, Au, Mg, and Pt) contacts is investigated. Excellent Ohmic conductance holds for C60 layers at room temperature, on using AlLiF bilayer contacts. Arrhenius type activated conductivity with an activation gap of 0.16eV is found.

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  • Received 28 June 2005

DOI:https://doi.org/10.1103/PhysRevB.72.155440

©2005 American Physical Society

Authors & Affiliations

Z. H. Lu, C. C. Lo, C. J. Huang, and Y. Y. Yuan

  • Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario Canada, M5S 3E4

M. W. C. Dharma-wardana* and Marek Z. Zgierski

  • National Research Council of Canada, Ottawa Canada, K1A 0R6

  • *Email address: chandre.dharma-wardana@nrc.ca

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Issue

Vol. 72, Iss. 15 — 15 October 2005

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