Alkali-metal-doping dynamics and anomalous lattice contraction of individual debundled carbon nanotubes

Gugang Chen, C. A. Furtado, U. J. Kim, and P. C. Eklund
Phys. Rev. B 72, 155406 – Published 10 October 2005

Abstract

The dynamics of K doping of thin films of semiconducting debundled single-walled carbon nanotubes (SWNTs) on a SiSiO2 substrate is followed using in situ Raman scattering. Similar to the behavior we observed in the Cs doping of bundled SWNTs, four distinct intervals during doping can be distinguished via the behavior of the high frequency tangential band (or G-band) scattering. We therefore find that the character of the time evolution of the frequency and linewidth of the most prominent G band with alkali-metal doping is almost identical for debundled and bundled tubes. This includes the observation of an anomalous upturn in the G-band frequency during the third interval of doping that is consistent with a contraction of the CC bond within the tube wall. We conclude that this anomalous contraction is not associated with doping-induced changes in the tube-tube interaction within a bundle, but is an intrinsic, and yet unexplained, consequence of an upshifting Fermi level in debundled n-doped SWNTs. A long induction period between when doping conditions are established and when changes in the Raman spectrum occur is observed and remains unexplained.

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  • Received 14 December 2004

DOI:https://doi.org/10.1103/PhysRevB.72.155406

©2005 American Physical Society

Authors & Affiliations

Gugang Chen1, C. A. Furtado1,2, U. J. Kim1, and P. C. Eklund1,3,*

  • 1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 2Centro de Desenvolvimento da Tecnologia Nuclear-CDTN/CNEN, Belo Horizonte, MG, Brazil
  • 3Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • *Author to whom correspondence should be addressed. Email address: pce3@psu.edu

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Vol. 72, Iss. 15 — 15 October 2005

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