Fermi-level oscillation in n-type δ-doped Si: A self-consistent tight-binding approach

X. Cartoixà and Y. -C. Chang
Phys. Rev. B 72, 125330 – Published 20 September 2005

Abstract

We have used the empirical tight-binding method within the antibonding orbital model to compute the self-consistent potential profile and Fermi level position in n-type δ-doped Si. This model describes the six valleys in the Si conduction band adequately. We include exchange-correlation effects under the local density approximation. The comparison of our results to empirical pseudopotential calculations shows very good agreement, while effective mass approximation calculations agree only in the low doping regime. At ultra high densities, an oscillatory behavior of the Fermi-level position as a function of the doping concentration is predicted.

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  • Received 2 May 2005

DOI:https://doi.org/10.1103/PhysRevB.72.125330

©2005 American Physical Society

Authors & Affiliations

X. Cartoixà* and Y. -C. Chang

  • Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

  • *Present address: Department d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Catalonia, Spain. Electronic address: Xavier.Cartoixa@uab.es

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Vol. 72, Iss. 12 — 15 September 2005

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