Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors

K. M. Indlekofer, J. Knoch, and J. Appenzeller
Phys. Rev. B 72, 125308 – Published 7 September 2005

Abstract

In this paper, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green’s function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nanotransistors, such as a gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 28 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.125308

©2005 American Physical Society

Authors & Affiliations

K. M. Indlekofer* and J. Knoch

  • Institute for Thin Films and Interfaces (ISG-1) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich GmbH, D-52425 Jülich, Germany

J. Appenzeller

  • IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

  • *Electronic address: m.indlekofer@fz-juelich.de

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 72, Iss. 12 — 15 September 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×