Voltage-controllable spin polarization of current: Model of three-terminal spin device

J. Wang, K. S. Chan, and D. Y. Xing
Phys. Rev. B 72, 115311 – Published 14 September 2005

Abstract

In order to enhance spin injection from ferromagnetic metals into nonmagnetic semiconductors, we propose a three-terminal spin device composed of a ferromagnetic metal lead coupling with two semiconductor leads via a quantum dot. By modulating the voltage at one of the leads, a pure spin current, or a fully spin-polarized current, can be obtained in one of the semiconductor leads. The intrinsic physics is that the quasi-Fermi energy in the quantum dot is spin splitted when a current flows from the ferromagnetic lead into the quantum dot. The proposed device should be realizable using present technology for efficient spin injection into the so-called spin field effect transistor or a nanowire device.

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  • Received 18 February 2005

DOI:https://doi.org/10.1103/PhysRevB.72.115311

©2005 American Physical Society

Authors & Affiliations

J. Wang and K. S. Chan

  • Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People’s Republic of China

D. Y. Xing

  • National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China

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Issue

Vol. 72, Iss. 11 — 15 September 2005

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