Hole–LO phonon interaction in InAsGaAs quantum dots

V. Preisler, R. Ferreira, S. Hameau, L. A. de Vaulchier, Y. Guldner, M. L. Sadowski, and A. Lemaitre
Phys. Rev. B 72, 115309 – Published 9 September 2005

Abstract

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using a far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the confined hole and the longitudinal optical phonons of the surrounding lattice using the Fröhlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good fit between the experiments and calculations provides strong evidence for the existence of hole polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states.

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  • Received 22 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.115309

©2005 American Physical Society

Authors & Affiliations

V. Preisler, R. Ferreira, S. Hameau, L. A. de Vaulchier, and Y. Guldner

  • Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

M. L. Sadowski

  • Grenoble High Magnetic Field Laboratory, CNRS∕MPI, 25 avenue des Martyrs, 38042 Grenoble Cedex 9, France

A. Lemaitre

  • Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France

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Issue

Vol. 72, Iss. 11 — 15 September 2005

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