Electron-induced stabilization of ferromagnetism in Ga1xGdxN

Gustavo M. Dalpian and Su-Huai Wei
Phys. Rev. B 72, 115201 – Published 1 September 2005

Abstract

Using ab initio band structure calculations and symmetry arguments, we show that the magnetic property of Ga1xGdxN is drastically different from TM-doped GaN. The coupling between Gd atoms in the alloy is antiferromagnetic, but the ferromagnetic phase can be stabilized by introducing electrons. Furthermore, we propose a model that may explain the recently observed colossal magnetic moments in this system, based on the polarization of donor electrons.

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  • Received 7 July 2005

DOI:https://doi.org/10.1103/PhysRevB.72.115201

©2005 American Physical Society

Authors & Affiliations

Gustavo M. Dalpian and Su-Huai Wei

  • National Renewable Energy Laboratory, Golden, Colorado 80401, USA

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Issue

Vol. 72, Iss. 11 — 15 September 2005

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