Molecular dynamics investigation of dislocation pinning by a nanovoid in copper

Takahiro Hatano and Hideki Matsui
Phys. Rev. B 72, 094105 – Published 12 September 2005

Abstract

The interaction between an edge dislocation and a void in copper is investigated by means of a molecular dynamics simulation. The depinning stresses of the leading partial and of the trailing partial show qualitatively different behaviors. The depinning stress of the trailing partial increases logarithmically with the void radius, while that of the leading partial behaves in a different manner due to the interaction between two partials. The pinning angle, which characterizes the obstacle strength, approaches zero when the void radius exceeds 3 nm. No temperature dependence is found in the critical stress and the critical angle. This is attributed to an absence of climb motion. It is also found that the distance between the void center and a glide plane asymmetrically affects the pinning strength.

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  • Received 18 February 2005

DOI:https://doi.org/10.1103/PhysRevB.72.094105

©2005 American Physical Society

Authors & Affiliations

Takahiro Hatano

  • Earthquake Research Institute, University of Tokyo, Tokyo 113-0032, Japan

Hideki Matsui

  • Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

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Issue

Vol. 72, Iss. 9 — 1 September 2005

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