Tunneling current and emission spectrum of a single-electron transistor under optical pumping

David M.-T. Kuo and Yia-Chung Chang
Phys. Rev. B 72, 085334 – Published 18 August 2005

Abstract

Theoretical studies of the tunneling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green’s function method within the Anderson model with two energy levels. It is found that holes in the quantum dot (QD) created by optical pumping lead to new channels for the electron tunneling from emitter to collector. As a consequence, an electron can tunnel through the QD via additional channels, characterized by the exciton, trion, and biexciton states. It is found that the tunneling current as a function of the gate voltage displays a series of sharp peaks and the spacing between these peaks can be used to determine the exciton binding energy as well as the electron–electron Coulomb repulsion energy. In addition, we show that the single-photon emission associated with the electron-hole recombination in the exciton complexes formed in the QD can be controlled both electrically and optically.

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  • Received 15 March 2005

DOI:https://doi.org/10.1103/PhysRevB.72.085334

©2005 American Physical Society

Authors & Affiliations

David M.-T. Kuo1 and Yia-Chung Chang2

  • 1Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, Republic of China
  • 2Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

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Issue

Vol. 72, Iss. 8 — 15 August 2005

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