Temperature dependence of the excitonic band gap in InxGa1xAsGaAs self-assembled quantum dots

G. Ortner, M. Schwab, M. Bayer, R. Pässler, S. Fafard, Z. Wasilewski, P. Hawrylak, and A. Forchel
Phys. Rev. B 72, 085328 – Published 15 August 2005

Abstract

Single-dot spectroscopy was used to determine the temperature dependence of the ground-state exciton energy E(T) in self-assembled InxGa1xAsGaAs quantum dots (QDs) from T=2 up to 100K. Differences of dot composition and geometry are manifested primarily in the absolute transition energies, whereas the band-gap reduction depends only weakly on microscopic details. E(T) can be well described by semiempirical phonon-dispersion models developed recently for bulk, suggesting that thermal lattice expansion and electron-phonon interaction are the dominant mechanisms for E(T), whereas QD-specific mechanisms seem to be of minor importance, in contrast to observations for nanocrystals.

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  • Received 19 December 2003

DOI:https://doi.org/10.1103/PhysRevB.72.085328

©2005 American Physical Society

Authors & Affiliations

G. Ortner*, M. Schwab, and M. Bayer

  • Experimentelle Physik II, Universität Dortmund, D-44221 Dortmund, Germany

R. Pässler

  • Technische Universität Chemnitz, Institut für Physik, D-09107 Chemnitz, Germany

S. Fafard, Z. Wasilewski, and P. Hawrylak

  • Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada

A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

  • *Electronic address: gerhard.ortner@physik.uni-dortmund.de

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Issue

Vol. 72, Iss. 8 — 15 August 2005

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