Nucleation and growth of Si(111)3×3Ag investigated in situ using second-harmonic generation

Dongmei Deng and Takanori Suzuki
Phys. Rev. B 72, 085308 – Published 2 August 2005

Abstract

Second-harmonic generation (SHG) has been used to monitor the adsorption of Ag on the Si(111)7×7 surface and its successive transformation to Si(111)3×3Ag in situ at several sample temperatures in the range from 190°C to 570°C. The decrease of the SH intensity with Ag deposition at elevated temperatures higher than about 200°C was found to be a result of destructive interference between the SH signals from Si(111)7×7 and Si(111)3×3Ag. The temporal dependence of the SH intensity was calculated for a direct transformation model of Si(111)3×3Ag formation. The calculation using the phase differences and the desorption rates obtained from the SH signal shows a temperature-dependent systematic deviation from the observed data; that is, reduced transformation to Si(111)3×3Ag in the initial stage of Ag deposition as compared with that in the direct transformation model, which clearly suggests the existence of a critical size of Ag islands for the nucleation of Si(111)3×3Ag. Once nucleated, the Si(111)3×3Ag transformation is indicated to be accelerated by the additionally deposited Ag atoms up to a Ag coverage, at which point all the deposited Ag atoms are incorporated into the reconstruction. Moreover, the peak of a polarization-selected SHG signal observed during desorption was found to correspond to a surface fully covered by the 3×1 structure with a Ag coverage of 13 monolayer.

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  • Received 7 March 2005

DOI:https://doi.org/10.1103/PhysRevB.72.085308

©2005 American Physical Society

Authors & Affiliations

Dongmei Deng1,2 and Takanori Suzuki1,*

  • 1Riken, The Institute of Physical and Chemical Research, Hirosawa 2-1, Wako, Saitama 351 0198, Japan
  • 2Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama 338-8570, Japan

  • *Corresponding author. Electronic address: tsuzuki@riken.jp

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Vol. 72, Iss. 8 — 15 August 2005

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