Stochastic models of carrier dynamics in single-walled carbon nanotubes

A. V. Barzykin and M. Tachiya
Phys. Rev. B 72, 075425 – Published 16 August 2005

Abstract

Recent time-resolved measurements in optically excited individual semiconducting single-walled carbon nanotubes have revealed rapid electron-hole pair annihilation. A stochastic model of the carrier dynamics has been proposed that includes Auger interactions and discrete occupancy of the nanotubes by the carriers [F. Wang et al., Phys. Rev. B 70, 241403(R) (2004)]. Here we solve this model analytically and also analyze another physically reasonable stochastic model which involves Auger ionization.

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  • Received 18 May 2005

DOI:https://doi.org/10.1103/PhysRevB.72.075425

©2005 American Physical Society

Authors & Affiliations

A. V. Barzykin* and M. Tachiya

  • National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan

  • *Electronic address: a.barzykin@aist.go.jp
  • Electronic address: m.tachiya@aist.go.jp

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Issue

Vol. 72, Iss. 7 — 15 August 2005

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