Exciton to two-dimensional electron-hole photoluminescence transitions driven by the quantum Hall effect in photoexcited heterojunctions

B. M. Ashkinadze, E. Linder, E. Cohen, V. V. Rudenkov, P. C. M. Christianen, J. C. Maan, and L. N. Pfeiffer
Phys. Rev. B 72, 075332 – Published 12 August 2005

Abstract

A comprehensive experimental study of the photoluminescence (PL) spectral evolution under a magnetic field (B25T) applied perpendicularly to a high-mobility two-dimensional electron gas (2DEG), is performed on modulation-doped GaAsAlGaAs heterojunctions at TL=0.3K. The abrupt transfer of the free exciton to hole-2DEG PL occurring at integer and fractional filling factors is analyzed in a phenomenological model, wherein free excitons photogenerated in the GaAs layer dissociate into a 2D electron and 3D hole near the 2D-electron channel. Such magnetic field induced exciton-(2De-h) transitions are able to explain the remarkable strong PL anomalies in single hetrojunctions as compared to those observed in modulation-doped quantum wells.

    • Received 24 March 2005

    DOI:https://doi.org/10.1103/PhysRevB.72.075332

    ©2005 American Physical Society

    Authors & Affiliations

    B. M. Ashkinadze, E. Linder, and E. Cohen

    • Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel

    V. V. Rudenkov, P. C. M. Christianen, and J. C. Maan

    • High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525ED Nijmegen, The Netherlands

    L. N. Pfeiffer

    • Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA

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    Issue

    Vol. 72, Iss. 7 — 15 August 2005

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