Effect of spin-dependent Mn2+ internal transitions in CdSeZn1xMnxSe magnetic semiconductor quantum dot systems

S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. B 72, 075320 – Published 5 August 2005

Abstract

CdSe quantum dots (QDs) in a ZnMnSe diluted magnetic semiconductor (DMS) matrix were investigated using both energy- and polarization-selective magneto-photoluminescence (PL). The peaks from Mn2+ internal transition, CdSe QDs, and ZnMnSe barrier were observed in the experiment done using above-barrier excitation. By examining the dependence of the PL peak intensity on magnetic field we were able to identify the competition between the Auger-type energy transfer process (i.e., the energy transfer from band electrons to Mn2+ ions) and energy relaxation into CdSe QDs in this QD system. The role of energy transfer processes between band electrons and Mn2+ ions in the DMS QDs was further studied by using excitation energy below the ZnMnSe band gap, where no change in the intensity of internal Mn2+ transitions with magnetic field was observed, indicating that the energy transfer from carriers excited into the ZnMnSe barrier is indeed responsible for the intensity behavior of these internal Mn2+ transitions observed in DMS QD structures.

    • Received 19 April 2005

    DOI:https://doi.org/10.1103/PhysRevB.72.075320

    ©2005 American Physical Society

    Authors & Affiliations

    S. Lee*

    • Department of Physics, Korea University, Seoul, 136-701, Korea

    M. Dobrowolska and J. K. Furdyna

    • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

    • *Electronic address: slee3@korea.ac.kr

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    Issue

    Vol. 72, Iss. 7 — 15 August 2005

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