Nonradiative multiphonon transitions in semiconductor quantum dots

A mathematical formalism suitable for a treatment of nonradiative multiphonon transitions in semiconductor quantum dots is developed. An analytical expression for the temperature dependence of the transition rate is derived.

Figure 1

(Color online) Temperature dependence of the relaxation time for the following values of parameters: $p{\omega }_0=165\mathrm{meV}$, $p=9$, $Z={\left(2.5\mathrm{meV}\right)}^2$, $Y=Z\bullet S$, and for different values of the Huang-Rhys factor: $S=2$ (solid line), $S=3$ (dashed line), and $S=5$ (dotted line).