Domain-wall magnetoresistance of Co nanowires

R. F. Sabirianov, A. K. Solanki, J. D. Burton, S. S. Jaswal, and E. Y. Tsymbal
Phys. Rev. B 72, 054443 – Published 30 August 2005

Abstract

Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic, and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We show that finite-size effects play an important role in these nanowires resulting in oscillatory behavior of electronic charge and the magnetization as a function of the wire thickness, and a nonmonotonic behavior of spin-dependent quantized conductance. We calculate the magnetoresistance (MR) of a domain wall (DW) modeled by a spin-spiral region of finite width sandwiched between two semi-infinite Co wire leads. We find that the DW MR decreases very rapidly, on the scale of a few interatomic layers, with the increasing DW width. The largest MR value of about 250% is predicted for an abrupt DW in the monatomic wire. We show that, for some energy values, the density of states and the conductance may be nonzero only in one spin channel, making the MR for the abrupt DW infinitely large. We also demonstrate that for the abrupt DW a large MR may occur due to the hybridization between two spin subbands across the DW interface. We do not find, however, such a behavior at the Fermi energy for the Co wires considered.

    • Received 7 June 2005

    DOI:https://doi.org/10.1103/PhysRevB.72.054443

    ©2005 American Physical Society

    Authors & Affiliations

    R. F. Sabirianov1,2, A. K. Solanki2,3,4, J. D. Burton2,3, S. S. Jaswal2,3, and E. Y. Tsymbal2,3

    • 1Department of Physics, University of Nebraska, Omaha, Nebraska 68182-0266, USA
    • 2Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0111, USA
    • 3Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0111, USA
    • 4Central Computer Center, Malaviya National Institute of Technology, Jaipur 302017, India

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    Issue

    Vol. 72, Iss. 5 — 1 August 2005

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