Approach to wetting-layer-assisted lateral coupling of InAsInP quantum dots

C. Cornet, C. Platz, P. Caroff, J. Even, C. Labbé, H. Folliot, A. Le Corre, and S. Loualiche
Phys. Rev. B 72, 035342 – Published 20 July 2005

Abstract

We present new results on the simulation of two-dimensional (2D) quantum dot(s) (QDs) InAsInP superlattices, emitting at 1.55μm, the optical telecommunication wavelength. QDs and wetting layer (WL) electronic energy states are close in such a system. Using the Fourier-transformed Schrödinger equation developed on a mixed basis, we describe the wetting layer-assisted inter-QDs lateral (WLaiQD) coupling by studying the influence of WL states on QDs states and vice versa. The results show that WL and QDs have to be considered as a unique system, in strong coupling conditions. The increase of QDs density on the WL leads to enhanced splitting and miniband effects on QDs states. It induces a fragmentation of WL density of states interpreted as a 0D-like confinement of WL states. A comparison is made with a real high QDs density sample. It is expected to have an impact on carrier-capture phenomena in optoelectronic devices using high-density QDs in the active region.

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  • Received 31 January 2005

DOI:https://doi.org/10.1103/PhysRevB.72.035342

©2005 American Physical Society

Authors & Affiliations

C. Cornet*, C. Platz, P. Caroff, J. Even, C. Labbé, H. Folliot, A. Le Corre, and S. Loualiche

  • LENS-UMR FOTON 6082 au CNRS, INSA de Rennes, 20 Avenue des Buttes de Coesmes, CS 14315, F34043 Rennes Cedex, France

  • *Electronic address: charles.cornet@ens.insa-rennes.fr

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Issue

Vol. 72, Iss. 3 — 15 July 2005

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