Observation of the Ettingshausen effect in quantum Hall systems

Yosuke Komori and Tohru Okamoto
Phys. Rev. B 71, 113306 – Published 15 March 2005

Abstract

Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAsAlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel shows remarkable asymmetric behaviors that indicate an electron temperature difference between the edges. The sign of the difference depends on the direction of the electric current and the polarity of the magnetic field. The results are consistent with the recent theory of Akera.

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  • Received 17 September 2004

DOI:https://doi.org/10.1103/PhysRevB.71.113306

©2005 American Physical Society

Authors & Affiliations

Yosuke Komori* and Tohru Okamoto

  • Department of Physics, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-0033, Japan

  • *Electronic address: komori@dolphin.phys.s.u-tokyo.ac.jp
  • Electronic address: okamoto@phys.s.u-tokyo.ac.jp

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Issue

Vol. 71, Iss. 11 — 15 March 2005

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