Exciton absorption properties of coherently coupled exciton-biexciton systems in quantum dots

Hideki Gotoh, Hidehiko Kamada, Tadashi Saitoh, Hiroaki Ando, and Jiro Temmyo
Phys. Rev. B 71, 195334 – Published 1 May 2005

Abstract

Exciton-biexciton coherent coupling effects are examined in semiconductor quantum dots. The exciton absorption spectrum is measured with the microphotoluminescence excitation technique in a single InGaAs quantum dot. The spectrum changes from a Lorenztian-type line shape to an unusual dip-shaped line shape with increasing excitation intensities in a higher exciton state where there is a large oscillator strength between the exciton and biexciton states. The intensity dependence of the dip energy width clearly indicates that coherent Rabi oscillation occurs between the exciton and biexciton states. The absorption properties with excitation light of different polarizations show that the dip-shaped spectra only appear when there is a large biexciton state population with linear polarization. A theoretical analysis undertaken with the density matrix method agrees well with experimental results. This agreement reveals that exciton-biexciton coherent interactions lead to unusual absorption spectra and contribute crucially to the optical properties of quantum dots. The exciton-biexciton coherent effects provide a scheme for controlling four distinguishable states, which can be applied to a demonstration of quantum gate operations.

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  • Received 17 December 2004

DOI:https://doi.org/10.1103/PhysRevB.71.195334

©2005 American Physical Society

Authors & Affiliations

Hideki Gotoh, Hidehiko Kamada, and Tadashi Saitoh*

  • NTT Basic Research Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

Hiroaki Ando

  • Department of Physics, Konan University, 8-9-1 Okamoto Higashinadaku, Kobe 658-8501, Japan

Jiro Temmyo

  • Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 422-8529, Japan

  • *Present address: Faculty of Engineering, Kansai University, 3-3-35, Yamate-cho, Suita-shi, Osaka 564-8680, Japan

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Issue

Vol. 71, Iss. 19 — 15 May 2005

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