Static and dynamic spectroscopy of (Al,Ga)AsGaAs microdisk lasers with interface fluctuation quantum dots

W. H. Wang, S. Ghosh, F. M. Mendoza, X. Li, D. D. Awschalom, and N. Samarth
Phys. Rev. B 71, 155306 – Published 7 April 2005

Abstract

We have studied the steady state and dynamic optical properties of semiconductor microdisk lasers whose active region contains interface fluctuation quantum dots in GaAs(Ga,Al)As quantum wells. Steady-state measurements of the stimulated emission via whispering gallery modes yield a quality factor Q5600 and a coupling constant β0.09. The broad gain spectrum produces mode hopping between spectrally adjacent whispering gallery modes as a function of temperature and excitation power. Time- and energy-resolved photoluminescence measurements show that the emission rise and decay rates increase significantly with excitation power. Marked differences are observed between the radiative decay rates in processed and unprocessed samples.

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  • Received 12 May 2004

DOI:https://doi.org/10.1103/PhysRevB.71.155306

©2005 American Physical Society

Authors & Affiliations

W. H. Wang1, S. Ghosh2, F. M. Mendoza2, X. Li1, D. D. Awschalom2, and N. Samarth1,2,*

  • 1Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, USA
  • 2Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA

  • *Electronic address: nsamarth@psu.edu

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Vol. 71, Iss. 15 — 15 April 2005

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