Ion-irradiation-induced stresses and swelling in amorphous Ge thin films

S. G. Mayr and R. S. Averback
Phys. Rev. B 71, 134102 – Published 5 April 2005

Abstract

Mechanical stresses and morphology during growth and ion bombardment of amorphous Ge thin films are investigated by a combination of in situ stress measurements and molecular dynamics computer simulations. Strong compressive stresses are generated during irradiation that subsequently lead to severe swelling. The simulations indicate that interstitial-mediated viscous flow in combination with well-localized vacancy defects are the main ingredients responsible for the observed phenomena.

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  • Received 16 November 2004

DOI:https://doi.org/10.1103/PhysRevB.71.134102

©2005 American Physical Society

Authors & Affiliations

S. G. Mayr1,2,* and R. S. Averback2

  • 1I. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
  • 2Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

  • *Electronic address: smayr@gwdg.de

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Issue

Vol. 71, Iss. 13 — 1 April 2005

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