Luminescence blinking of a Si quantum dot in a SiO2 shell

Ilya Sychugov, Robert Juhasz, Jan Linnros, and Jan Valenta
Phys. Rev. B 71, 115331 – Published 29 March 2005

Abstract

The phenomenon of on-off luminescence intermittency—blinking—in silicon nanocrystals was studied using a single-dot microphotoluminescence technique. From recordings of the luminescence intensity trace, on- and off-time distributions were extracted revealing exponential behavior, as expected for systems with blinking of a purely random nature. The corresponding switching rates for on-off and off-on processes exhibit different dependence on the excitation intensity. While the on-off switching rate grows quadratically with the excitation, the inverse process is nearly pumping power independent. Experimental findings are interpreted in terms of a dot “charging” model, where a carrier may become trapped in the surrounding matrix due to thermal and Auger-assisted processes. Observed blinking kinetics appear to be different from that of porous silicon particles.

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  • Received 13 December 2004

DOI:https://doi.org/10.1103/PhysRevB.71.115331

©2005 American Physical Society

Authors & Affiliations

Ilya Sychugov, Robert Juhasz, and Jan Linnros

  • Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology, SE-16440, Kista-Stockholm, Sweden

Jan Valenta

  • Faculty of Mathematics and Physics, Department of Chemical Physics and Optics, Charles University, Ke Karlovu 3, Prague 2, CZ-12116, Czech Republic

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Issue

Vol. 71, Iss. 11 — 15 March 2005

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