Optical and morphological properties of GaN quantum dots doped with Tm

T. Andreev, Y. Hori, X. Biquard, E. Monroy, D. Jalabert, A. Farchi, M. Tanaka, O. Oda, Le Si Dang, and B. Daudin
Phys. Rev. B 71, 115310 – Published 16 March 2005

Abstract

We report on optical and structural properties of wurtzite-phase Tm-doped GaN quantum dots (QDs) embedded in an AlN matrix, grown by plasma-assisted molecular beam epitaxy. The influence of Tm on the size and shape of the QDs is analyzed. The optical properties are studied using cathodoluminescence and photoluminescence. Intra4fTm transitions from the D21 level show constant temperature behavior from 10K to room temperature. The internal electric field and strains in the QDs yield a redshift and an additional broadening of the lines. We demonstrate that Tm atoms are partially located in the GaN QDs and partially at the GaNAlN interface.

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  • Received 16 November 2004

DOI:https://doi.org/10.1103/PhysRevB.71.115310

©2005 American Physical Society

Authors & Affiliations

T. Andreev1,*, Y. Hori1,2, X. Biquard1, E. Monroy1, D. Jalabert1, A. Farchi1, M. Tanaka2, O. Oda2, Le Si Dang3, and B. Daudin1

  • 1CEA/CNRS/UJF research group Nanophysique et Semiconducteurs, 17 rue des Martyrs, 38054-Grenoble cedex 9, France
  • 2NGK Insulators, Ltd., 2-24 Sudacho, Mizuhoku, Nagoya, Japan
  • 3CEA/CNRS/UJF research group Nanophysique et Semiconducteurs, Laboratoire Spectrométrie Physique (CNRS UMR5588), Université J. Fourier, Boîte Postale 87, 38402 Saint Martin d’Hères, France

  • *Corresponding author: Thomas Andreev. Electronic address: andreev@drfmc.ceng.cea.fr

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Issue

Vol. 71, Iss. 11 — 15 March 2005

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