Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II SiGe quantum dots

M. Larsson, P. O. Holtz, A. Elfving, G. V. Hansson, and W.-X. Ni
Phys. Rev. B 71, 113301 – Published 2 March 2005

Abstract

We report on the quantum-confined Stark effect for spatially indirect transitions in Stranski-Krastanov grown type-II SiGe quantum dots. A linear blueshift of the spatially indirect transition is observed at increasing electric field in contrast to the commonly observed redshift for type-I transitions. A shift of the emission-peak position and different quenching rates of the photoluminescence for pin and nip diodes at increased electric field and temperature indicate a deeper notch potential for electrons above the dot than below due to a strain-induced asymmetry in the band alignment.

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  • Received 4 November 2004
  • Publisher error corrected 8 March 2005

DOI:https://doi.org/10.1103/PhysRevB.71.113301

©2005 American Physical Society

Corrections

8 March 2005

Erratum

Authors & Affiliations

M. Larsson, P. O. Holtz, A. Elfving, G. V. Hansson, and W.-X. Ni

  • IFM, Department of Physics, Linköping University, S-581 83 Linköping, Sweden

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Issue

Vol. 71, Iss. 11 — 15 March 2005

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