Scanning capacitance microscopy of nanostructures

H. E. Ruda and A. Shik
Phys. Rev. B 71, 075316 – Published 18 February 2005

Abstract

A theory is developed for scanning capacitance microscopy (SCM) of samples containing quantum wells, nanowires, and nanodots. The observed SCM image does not reproduce the geometric characteristics of the system but can be used for extracting some important information. For quantum wells and nanowire arrays, SCM gives an opportunity to determine the doping level of nanostructures. For individual nanowires and dots, the positions and amplitude of SCM maxima give, respectively, the in-plane location and the depth of the objects, and the pattern shape is extremely sensitive to the nanowire orientation.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 10 May 2004

DOI:https://doi.org/10.1103/PhysRevB.71.075316

©2005 American Physical Society

Authors & Affiliations

H. E. Ruda and A. Shik

  • Centre for Advanced Nanotechnology, University of Toronto, Toronto M5S 3E4, Canada

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 71, Iss. 7 — 15 February 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×