Hole spin relaxation in semiconductor quantum dots

C. Lü, J. L. Cheng, and M. W. Wu
Phys. Rev. B 71, 075308 – Published 11 February 2005

Abstract

Hole spin relaxation time due to the hole–acoustic-phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width, and the temperature on the spin relaxation time are investigated thoroughly. Many features that are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.

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  • Received 9 September 2004

DOI:https://doi.org/10.1103/PhysRevB.71.075308

©2005 American Physical Society

Authors & Affiliations

C. Lü1,2, J. L. Cheng2, and M. W. Wu1,2,*

  • 1Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
  • 2Department of Physics, University of Science & Technology of China, Hefei, Anhui, 230026, China†

  • *Author to whom correspondence should be addressed. Electronic address: mwwu@ustc.edu.cn
  • Mailing address.

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Issue

Vol. 71, Iss. 7 — 15 February 2005

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