Origin of surface metallization of Si(001) at high temperatures

Jun-Hyung Cho and Jung-Yup Lee
Phys. Rev. B 71, 075307 – Published 10 February 2005

Abstract

Surface metallization of Si(001) has been observed at high temperatures, but its explanation is controversial. Such a temperature-induced metallization can be explained in terms of a symmetric-dimer model where symmetric dimers are alternately displaced up and down along the dimer rows. We find that this symmetric-dimer model has an electronlike Fermi surface around the Γ point and a hole pocket centered at the K12 point, in good agreement with angle-resolved photoemission spectroscopy data. Since the p(2×2) symmetric-dimer structure is more favored over the conventional p(2×1) symmetric-dimer structure, its presence may be confirmed by a more detailed analysis of recent reflection high-energy electron-diffraction data which showed the phase transition from a buckled- to a symmetric-dimer structure at high temperatures.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 20 September 2004

DOI:https://doi.org/10.1103/PhysRevB.71.075307

©2005 American Physical Society

Authors & Affiliations

Jun-Hyung Cho and Jung-Yup Lee

  • Department of Physics, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 71, Iss. 7 — 15 February 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×