Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7×7

W. B. Su, H. Y. Lin, Y. P. Chiu, H. T. Shih, T. Y. Fu, Y. W. Chen, C. S. Chang, and Tien T. Tsong
Phys. Rev. B 71, 073304 – Published 15 February 2005

Abstract

It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7×7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111)7×7 substrate at room temperature.

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  • Received 6 May 2004

DOI:https://doi.org/10.1103/PhysRevB.71.073304

©2005 American Physical Society

Authors & Affiliations

W. B. Su1, H. Y. Lin1,2, Y. P. Chiu1,3, H. T. Shih1, T. Y. Fu3, Y. W. Chen2, C. S. Chang1, and Tien T. Tsong1

  • 1Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China
  • 2Department of Chemical and Materials Engineering, National Central University, Chungli, Taiwan, Republic of China
  • 3Department of Physics, National Taiwan Normal University, Taipei, Taiwan, Republic of China

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Vol. 71, Iss. 7 — 15 February 2005

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