Abstract
The dielectric properties of thin films and multilayers are different from bulk materials because of nanoscale dimensions, interfaces, and stress-strain conditions. In this study, multilayers deposited on substrates by pulsed laser deposition have been investigated by high-energy-resolution electron energy-loss spectroscopy. The fine structures in the spectra are discussed in terms of crystal-field splitting and the internal strain. The crystal-field splitting of the thin layer is found to be a little larger than that of bulk , which has been interpreted by the presence of the internal strain induced by the misfit at the interface. This finding is consistent with the lattice parameters of the thin layer determined by the selected area diffraction pattern. The near-edge structure of the oxygen K edge in thin layers and in bulk are simulated by first-principle self-consistent full multiple-scattering calculations. The results of the simulations are in a good agreement with the experimental results. Moreover, the aggregation of oxygen vacancies at the rough interface is indicated by the increased element ratio, which dominates the difference of dielectric properties between layer and bulk materials.
1 More- Received 31 May 2004
DOI:https://doi.org/10.1103/PhysRevB.71.064108
©2005 American Physical Society