High-frequency transport in p-type SiSi0.87Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime

I. L. Drichko, A. M. Diakonov, I. Yu. Smirnov, G. O. Andrianov, O. A. Mironov, M. Myronov, D. R. Leadley, and T. E. Whall
Phys. Rev. B 71, 045333 – Published 26 January 2005

Abstract

The interaction of surface acoustic waves (SAWs) with p-type SiSi0.87Ge0.13 heterostructures has been studied for SAW frequencies of 30300MHz. For temperatures in the range 0.7<T<1.6K and magnetic fields up to 7T, the SAW attenuation coefficient Γ and velocity change ΔVV were found to oscillate with filling factor. Both the real σ1 and imaginary σ2 components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33mK. By analyzing the ratio of σ1 to σ2, carrier localization can be followed as a function of temperature and magnetic field. At T=0.7K, the variations of Γ, ΔVV, and σ1 with SAW intensity have been studied and can be explained by heating of the two-dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.

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  • Received 16 June 2004

DOI:https://doi.org/10.1103/PhysRevB.71.045333

©2005 American Physical Society

Authors & Affiliations

I. L. Drichko*, A. M. Diakonov, I. Yu. Smirnov, and G. O. Andrianov

  • A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg, Russia

O. A. Mironov, M. Myronov, D. R. Leadley, and T. E. Whall

  • Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

  • *Electronic address: irina.l.drichko@mail.ioffe.ru

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Vol. 71, Iss. 4 — 15 January 2005

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