Theoretical study of phosphorous δ-doped silicon for quantum computing

Gefei Qian, Yia-Chung Chang, and J. R. Tucker
Phys. Rev. B 71, 045309 – Published 12 January 2005

Abstract

We present microscopic model calculations of phosphorous δ-doped silicon. Using the planar Wannier orbitals [Y. C. Chang and G. Li, Comput. Phys. Commun. 95, 158 (1996)] obtained based on the pseudopotential method, we calculate the electronic structures of a large slab (1000 ML) self-consistently (for doping electrons), taking into account both the long-range Coulomb potential in the direction perpendicular to the doping plane and the short-range interaction due to the 14 monolayer (ML) phosphor δ doping. Our results show that the Fermi level after doping is about 100meV below silicon conduction band minimum (CBM). We also find that the short-range interaction due to P dopants only has a minor influence on the Fermi level.

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  • Received 20 July 2004

DOI:https://doi.org/10.1103/PhysRevB.71.045309

©2005 American Physical Society

Authors & Affiliations

Gefei Qian1, Yia-Chung Chang1, and J. R. Tucker2

  • 1Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801, USA
  • 2Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

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Issue

Vol. 71, Iss. 4 — 15 January 2005

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