Trapping hydrogen with a bimetallic interface

Michio Okada, Kousuke Moritani, Toshio Kasai, Wilson Agerico Diño, Hideaki Kasai, Shouhei Ogura, Markus Wilde, and Katsuyuki Fukutani
Phys. Rev. B 71, 033408 – Published 25 January 2005

Abstract

We report results of a study on the interaction of hydrogen with thin Au films grown on an Ir{111} surface at 100K, using nuclear reaction analysis and first-principles calculations. We found that H atoms can be confined at the interface between the bulk-Ir surface and the Au thin film, which is realized by increasing the binding energy and the activation barrier for desorption via lattice relaxation of the Au layer.

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  • Received 14 October 2004

DOI:https://doi.org/10.1103/PhysRevB.71.033408

©2005 American Physical Society

Authors & Affiliations

Michio Okada*, Kousuke Moritani, and Toshio Kasai

  • Department of Chemistry, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan

Wilson Agerico Diño

  • Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan; and Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan; and Physics Department, De La Salle University, Taft Ave., Manila 1004, Philippines

Hideaki Kasai

  • Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan

Shouhei Ogura, Markus Wilde, and Katsuyuki Fukutani

  • Institute of Industrial Science, The University of Tokyo, Meguro-ku, Tokyo 153-8 505, Japan

  • *E-mail address: okada@chem.sci.osaka-u.ac.jp
  • E-mail address: fukutani@iis.u-tokyo.ac.jp

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Issue

Vol. 71, Iss. 3 — 15 January 2005

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