Abstract
Above room temperature ferromagnetic behavior is achieved in Si through Mn ion implantation. Three-hundred-keV ions were implanted to 0.1% and 0.8% peak atomic concentrations, yielding a saturation magnetization of at for the highest concentration as measured using a SQUID magnetometer. The saturation magnetization increased by after annealing at for . The Curie temperature for all samples was found to be greater than . A significant difference in the temperature-dependent remnant magnetization between the implanted p-type and n-type Si is observed, giving strong evidence that a Si-based diluted magnetic semiconductor can be achieved.
- Received 10 August 2004
DOI:https://doi.org/10.1103/PhysRevB.71.033302
©2005 American Physical Society