Above room temperature ferromagnetism in Mn-ion implanted Si

M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello, and V. P. LaBella
Phys. Rev. B 71, 033302 – Published 4 January 2005

Abstract

Above room temperature ferromagnetic behavior is achieved in Si through Mn ion implantation. Three-hundred-keV Mn+ ions were implanted to 0.1% and 0.8% peak atomic concentrations, yielding a saturation magnetization of 0.3emug at 300K for the highest concentration as measured using a SQUID magnetometer. The saturation magnetization increased by 2× after annealing at 800°C for 5min. The Curie temperature for all samples was found to be greater than 400K. A significant difference in the temperature-dependent remnant magnetization between the implanted p-type and n-type Si is observed, giving strong evidence that a Si-based diluted magnetic semiconductor can be achieved.

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  • Received 10 August 2004

DOI:https://doi.org/10.1103/PhysRevB.71.033302

©2005 American Physical Society

Authors & Affiliations

M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello, and V. P. LaBella

  • College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203, USA

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Issue

Vol. 71, Iss. 3 — 15 January 2005

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