Compressive and tensile stress in colloidal CdSe semiconductor quantum dots

Robert W. Meulenberg, Travis Jennings, and Geoffrey F. Strouse
Phys. Rev. B 70, 235311 – Published 9 December 2004

Abstract

Compressive and tensile stress in colloidal CdSe quantum dots (QDs) is examined using resonance Raman spectroscopy. We find that the dispersion of the longitudinal optical phonon mode with size does not follow theoretical calculations based on phonon confinement models. To account for these deviations, the presence of compressive or tensile stress in the QDs is proposed. The influence of surface reconstruction on QD behavior is evidenced by differences in hexadecylamine (HDA) and trioctylphospine oxide (TOP/TOPO) passivation. We find that CdSe QDs passivated by HDA exhibit compressive stress, while CdSe QDs passivated by TOP/TOPO exhibit tensile stress. Evidence is provided that the CdSe-HDA QD stress is directly to a passivant driven surface reconstruction effect.

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  • Received 19 May 2004

DOI:https://doi.org/10.1103/PhysRevB.70.235311

©2004 American Physical Society

Authors & Affiliations

Robert W. Meulenberg*

  • Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA

Travis Jennings and Geoffrey F. Strouse

  • Department of Chemistry, Florida State University, Tallahassee, Florida 32316, USA

  • *Electronic address: meulenberg1@llnl.gov
  • Electronic address: strouse@chem.fsu.edu

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Issue

Vol. 70, Iss. 23 — 15 December 2004

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